to-263-3l plastic-encapsulate transistors 3DD13005 transistor (npn) features power switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 700 v collector-emitter breakdown voltage v (br)ceo i c = 10ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 1ma,i c =0 9 v collector cut-off current i cbo v cb =700v,i e =0 1 ma collector cut-off current i ceo v ce =400v,i b =0 0.1 ma emitter cut-off current i ebo v eb =7v,i c =0 0.05 ma h fe(1) v ce =5v, i c =1a 10 60 h fe(2) v ce =5v, i c =10ma 5 dc current gain h fe(3) v ce =5v, i c =2a 8 v ce(sat)1 i c =1a,i b =0.2a 0.3 v collector-emitter saturation voltage v ce(sat)2 i c =4a,i b =1a 0.8 v base-emitter saturation voltage v be(sat) i c =2a,i b =0.5a 1.6 v transition frequency f t v ce =10v, i c =500ma,f=1mhz 5 mhz storage time t s i c =250ma 2.5 5 us classification of h fe(1) range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 classification of t s rank a b1 b2 c1 c2 range 2.5-3 3-3.5 3.5- 4 4-4.5 4.5-5 symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 4 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 /w t j junction temperature 150 t stg storage temperature -55~+150 to-263-3l 1 . base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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